An InGaP/InGaAs PHEMT with High IP3 for Low Noise Application
碩士 === 國立交通大學 === 材料科學與工程系 === 91 === The purpose of this dissertation is to develop the high linearity and low noise high electron mobility transistors for wireless application. The device structure design has the following features: First, high band-gap InGaP material was used as the Sc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95451966093024371324 |