Strain Analyses of C-induced Ge/Si(100) Quantum Dots
碩士 === 國立成功大學 === 機械工程學系碩博士班 === 91 === We calculated the strain distributions in capped domed Ge/Si0.69Ge0.3C0.01/Si quantum dots heterosystem using finite-element method. For practicability we examined the cases of different island shape, with and without covered models. After that we compared w...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13551031992173143171 |
| Summary: | 碩士 === 國立成功大學 === 機械工程學系碩博士班 === 91 === We calculated the strain distributions in capped domed Ge/Si0.69Ge0.3C0.01/Si quantum dots heterosystem using finite-element method. For practicability we examined the cases of different island shape, with and without covered models. After that we compared with the models having variant truncation factors. Results show that the hydrostatic component of the strain is almost remains unchanged within the dots, while the biaxial strain is very sensitive to the truncation factor. One can therefore use strain to tailor the band structure according to the needs for a particular application.
Factors such as the thickness of the spacer layer and the truncation factor of the island are found to play an important role in the vertical self-organized growth. The vertical correlation decreases with the increase in cap layer thickness, and deviates from the center of cap layer surface with the island having larger truncation factor. Besides, the effects of two dots are also discussed. All results within the study could provide useful suggestions.
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