Strain Analyses of C-induced Ge/Si(100) Quantum Dots
碩士 === 國立成功大學 === 機械工程學系碩博士班 === 91 === We calculated the strain distributions in capped domed Ge/Si0.69Ge0.3C0.01/Si quantum dots heterosystem using finite-element method. For practicability we examined the cases of different island shape, with and without covered models. After that we compared w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13551031992173143171 |