Process Optimization and Electrical Characterization of High-K Gate Dielectric for ULSI Applications

博士 === 國立成功大學 === 電機工程學系碩博士班 === 91 === The characteristics of high-K dielectrics for ULSI applications have been investigated. Additionally, optimization of technology processes has been developed to promote the characteristics of MOS devices with the high-K materials, including (a) nitrided oxide,...

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Bibliographic Details
Main Authors: Chih-Wei Yang, 楊智偉
Other Authors: Yean-Kuen Fang
Format: Others
Language:en_US
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/25997558701556284832