The effect of finger gate structure on the RF Characteristics of deep-submicron MOS transistor
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === In the thesis, the effects of external parasitic elements on the radio frequency (RF) characteristics of CMOSFET, such as cut-off frequency (fT) and maximum oscillation frequency (f max) were studied in detail. As the device size is scaling down continuously...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87769046396401229703 |