Design and Fabrication of High-Voltage SiC SBDs with FMR edge termination
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === In this thesis, the design and fabrication of high voltage 4H-SiC Schottky barrier diodes (SBDs) with floating metal rings (FMR) edge termination (ET) scheme is presented. Two-dimension simulation to investigate the influence of FMR parameters such as the wi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45122680259843516227 |