Investigation of Step Graded Channel Heterostructure Field Effect Transistor
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === In this thesis, the high electron mobility transistors (HEMT’s) with step-composition channel grown by metalorganic chemical vapor deposition (MOCVD) have been studied. The improvement can be expected by using a novel channel structure. By using the step g...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/34606639069130812908 |