Improvement in light-output efficiency of InGaN/GaN blue LED by current blocking layer and surface passivation layer
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === Because of improved epitaxial growth and advanced process technology, the quantum efficiencies of GaN-based LEDs are increased. However, the external quantum efficiencies are less significantly than that based on GaAs. One of the reasons is that non-uniform...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12498817582206414245 |