Investigation of InP-based high electron mobility transistor using InGaAs and InGaAsP channel
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === In this paper, we have successfully improved the breakdown characteristics of InP lattice matched HEMT by using the undoped cap layer and triple channel respectively. By using undoped cap layer we can reduce the electric field between drain and gate. Due to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32333495645205187797 |