Gate oxide reliability of advance CMOS device
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 91 === In this thesis, the sample is an 8inch wafer for 0.15μm technology n-MOSFET’s and p-MOSFET’s and we researched on oxide reliability. As devices scaling down, the device operational voltage and some characteristic still decreases slowly. The area and the thic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51931041390158072911 |