Effect of oxygen partial pressure, buffered Bi2O3 layers, and V doping on the ferroelectricity of (Bi,La)4Ti3O12 films grown by radio-frequency sputtered deposition.
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 91 === Effects of O2/Ar ratio, buffered Bi2O3 layers, and ion implantation on the ferroelectricity and microstructures of (Bi,La)4Ti3O12(BLT) and V-doped BLT(BLTVx) films deposited by radio-frequency sputtering were studied. The remanent polarization(2Pr) of BLTV0...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81487006920756452368 |