Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer

Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer

碩士 === 崑山科技大學 === 電機工程研究所 === 91 === In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source...

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Main Authors: Jun-Liang Pu, 蒲俊良
Other Authors: n
Format: Others
Language:zh-TW
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/e394c2
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spelling ndltd-TW-091KSUT54420212019-05-15T20:33:45Z http://ndltd.ncl.edu.tw/handle/e394c2 Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer 使用低溫氮化鎵/極薄氮化鋁濕化層在矽基板上成長氮化鎵之研究 Jun-Liang Pu 蒲俊良 碩士 崑山科技大學 電機工程研究所 91 In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal organic chemical vapor phase deposition (MOCVD), X-ray diffraction (XRD), photoluminescence and AFM measurement. Then we do the systematic research on GaN under different growth condition. We analyze the GaN crystal quality affected by the growth flow of buffer layer. Finally, we can observe GaN crystal layer of surface level and smooth by AFM and high multiple optics microscope measurement. We study the film GaN crystal quality by X-ray diffraction (XRD) measurement and the shift of the PL spectra under different excitation light intensity. n 李道聖 2003 學位論文 ; thesis 70 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 崑山科技大學 === 電機工程研究所 === 91 === In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal organic chemical vapor phase deposition (MOCVD), X-ray diffraction (XRD), photoluminescence and AFM measurement. Then we do the systematic research on GaN under different growth condition. We analyze the GaN crystal quality affected by the growth flow of buffer layer. Finally, we can observe GaN crystal layer of surface level and smooth by AFM and high multiple optics microscope measurement. We study the film GaN crystal quality by X-ray diffraction (XRD) measurement and the shift of the PL spectra under different excitation light intensity.
author2 n
author_facet n
Jun-Liang Pu
蒲俊良
author Jun-Liang Pu
蒲俊良
spellingShingle Jun-Liang Pu
蒲俊良
Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer
author_sort Jun-Liang Pu
title Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer
title_short Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer
title_full Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer
title_fullStr Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer
title_full_unstemmed Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer
title_sort investigation of gan layer grown on si(111) substrate using an lt gan/ultrathin aln wetting layer
publishDate 2003
url http://ndltd.ncl.edu.tw/handle/e394c2
work_keys_str_mv AT junliangpu investigationofganlayergrownonsi111substrateusinganltganultrathinalnwettinglayer
AT pújùnliáng investigationofganlayergrownonsi111substrateusinganltganultrathinalnwettinglayer
AT junliangpu shǐyòngdīwēndànhuàjiājíbáodànhuàlǚshīhuàcéngzàixìjībǎnshàngchéngzhǎngdànhuàjiāzhīyánjiū
AT pújùnliáng shǐyòngdīwēndànhuàjiājíbáodànhuàlǚshīhuàcéngzàixìjībǎnshàngchéngzhǎngdànhuàjiāzhīyánjiū
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