Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer
碩士 === 崑山科技大學 === 電機工程研究所 === 91 === In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/e394c2 |