Investigation of the Effect of Al-containing Ⅲ-nitride Multi-layers on the Behaviors of Threading Dislocations in GaN Films
碩士 === 逢甲大學 === 材料科學所 === 91 === The purpose of this study is to explore the effect of strained multi-layers on the behaviors of threading dislocations in GaN films. GaN films were grown on (0001) sapphire substrates by atomic layer epitaxy (ALE). Groups III metalorganics and NH3 were used as the so...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/p7affb |