A Study of Smart IGBTs Desgin
碩士 === 大葉大學 === 電機工程學系碩士班 === 91 === Insulation-Gate Bipolar Transistor（IGBT）,which is developed for power devices use on medium-power and medium-frequency. It integrates the structures of Power Bipolar Transistor and Power MOSFET, and then it has better performance in many applications....
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/82638606101929992773 |