| Summary: | 碩士 === 國立中正大學 === 機械系 === 91 === Probe card is a very important tool for wafer testing. The electrical properties could be measured from the contact between probe and bonding pad. The above process often be used to determine the die is pass or fail. The most important testing parameters that affect the probe mark size and damage of probe are the over-drive（OD）and probe geometry. The aim of this research is to develop the experimental methods and computational models that can be used to study the influence of the probe mark and probe through different OD and probe geometry. For experimental works, micro-force tensile tests were used to measure the probe mechanical properties. The resulting stress-strain curve is conjunction with FEM models to simulation the wafer testing. Resultant probe testing profile obtained from simulation were compare with actual wafer testing to verify the accuracy of simulation model. Next, we applied the FEM model to study the effect of different OD and bending angle on pad and probe. At fixed bending angle, the sinking value of bonding pad will increase by increasing OD. Changing the bending angles did not significantly effect on sinking value. Finally, Cu pad has been built put into FEM simulation model to examine the effect. Compare with sinking value, the Cu pad is larger than Al pad. The result, from this research can support the engineer to design better probe geometry shape and choose wafer testing conditions.
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