Fabrication of InAs/InGaAs Self-organized Quantum Dot Lasers

• Main Authors: WU CHUNG CHIANG, 吳仲強
• Other Authors: 林浩雄
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/53136711015988547959

碩士 === 國立臺灣大學 === 電機工程學研究所 === 90 === In this study, we have successfully fabricated 1.3 mm quantum dot (QD) laser diodes operated at room temperature. The QD laser structure was grown by using gas source molecular beam epitaxy. Each QD layer consists of 2ML InAs and 9ML In0.33Ga0.67As. Broad area laser diodes with 50mm width were fabricated from the structures by using standard photolithography, vacuum evaporation, and metallization techniques. Migration enhanced technique was used to grow the QD. However, the density is only 2.32´1010/cm2. Four QD layers were used as the active medium of Laser sample C1321. However, only first excited state lasing was observed at room temperature. By using interruption technique during the deposition of InGaAs, we can increase the QD density up to 7.64´1010/cm2. Laser samples with 1~6 QD layers in their active medium were then fabricated and studied. The best result is from the laser diode with 3 QD layers, which demonstrates a ground state laser oscillation at 1307nm with a threshold current density of 472A/cm2.