Fabrication of InAs/InGaAs Self-organized Quantum Dot Lasers
碩士 === 國立臺灣大學 === 電機工程學研究所 === 90 === In this study, we have successfully fabricated 1.3 mm quantum dot (QD) laser diodes operated at room temperature. The QD laser structure was grown by using gas source molecular beam epitaxy. Each QD layer consists of 2ML InAs and 9ML In0.33Ga0.67As. B...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53136711015988547959 |