Study on The Band Gap of InAs(N) Alloys
碩士 === 國立臺灣大學 === 電機工程學研究所 === 90 === In this thesis the band gaps of InAsN alloys and transition energies of InAs(N)/InGaAs quantum wells are investigated by a recently reported band anticrossing model. The InAs(N) bulks and InAs(N)/InGaAs quantum wells are grown on semi-insulated (001)...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55784133974102614384 |