The Study of InAs/GaAs Quantum-Dot Structure and Its Application on Infrared Photodetector
博士 === 國立臺灣大學 === 電機工程學研究所 === 90 === In this thesis, samples with InAs quantum dots (QD) grown on (100) GaAs substrate by molecular beam epitaxy (MBE) are investigated. The more uniform InAs QDs is observed for samples grown under As shutter closed conditions. Also observed is the format...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08449630289553051588 |