Electroreflectance Study of Si/Ge Compound Semiconductors

• Main Authors: Lin Sheng Chang, 林昇璋
• Other Authors: Chien-Rong Lu
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/66633743527121016904

碩士 === 國立臺灣師範大學 === 物理研究所 === 90 === ABSTRACT We have investigated the Si1-xGex alloy and Si/Ge multiple quantum wells grown by Solid Source Molecular Beam Epitaxy (MBE) using electroreflectance (ER) at various temperatures. The ER spectral features with photon energy about 820meV correspond to the transition involving the alloy- band of the ioselectronic centers in the Si1-xGex alloys. The efficiency of ER modulation is enhanced with increasing growth temperature of the low temperature-Si. We have also studied all the principal optical transitions in strained Si/Ge multiple quantum well structures. The quantum wells confined energy levels were calculated by K-P model. The transitions involving the quantum states are compared with observed spectral features.