Electroreflectance Study of Si/Ge Compound Semiconductors
碩士 === 國立臺灣師範大學 === 物理研究所 === 90 === ABSTRACT We have investigated the Si1-xGex alloy and Si/Ge multiple quantum wells grown by Solid Source Molecular Beam Epitaxy (MBE) using electroreflectance (ER) at various temperatures. The ER spectral features with photon energy about 820...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66633743527121016904 |