The Effect of CF4 Plasma on the Device Characteristics and Reliability Properties of 0.18μm MOSFETs
碩士 === 國立清華大學 === 電子工程研究所 === 90 === As the device geometry continues to scale to deep sub-micron, high dose implant is essential in the source/drain for device optimization. However, in photoresist strip step of high dose implant process, carbonized photoresist residue becomes a critical...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84400471793197779514 |