Copper Dishing Behavior During Chemical Mechanical Polishing

碩士 === 國立清華大學 === 動力機械工程學系 === 90 === The objective of this study was to establish an approach to simulate and predict the behavior of dishing. The dishing phenomenon was an key issue for the chemical mechanical planarization of wafer, especially when copper was used as the conducting ma...

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Bibliographic Details
Main Authors: Jia-Bin Lin, 林佳賓
Other Authors: Shih-Chieh Lin
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/48951797366184605093