Interficial Reactions of Ti Metal Thin Films on Strained Si/SiGe Substrates
碩士 === 國立清華大學 === 材料科學工程學系 === 90 === Interfacial reactions of Ti on strained Si epitaxially grown on Si0.7Ge0.3 have been investigated. 35-nm-thick strained Si films were epitaxially grown on 300-nm-thick Si0.7Ge0.3 at 500℃ by solid source molecular beam epitaxy(MBE). The stre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87095601006589489325 |