A Design of Experiment for Nonselective Etching InGaAs/GaAs/InGaP in Inductively Coupled Plasma BCl3/HBr Discharges
碩士 === 國立清華大學 === 材料科學工程學系 === 90 === A design of experiment for nonselective etching InGaAs/GaAs/InGaP in inductively coupled plasma (ICP) BCl3/HBr discharges has been investigated. The influences of variations in pressure, RF1 power (chuck power-13.56MHz), RF2 power (ICP power-2MHz), and gas flow...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/38043384995624811141 |