Fluorinated Oxynitride Films Prepared by Temperature-Difference Deposition Method Using the Aqueous Solution of Hydrofluorosilicic Acid and Ammonium Hydroxide
碩士 === 國立中山大學 === 電機工程學系研究所 === 90 === The advantages of LPD method, low temperature process, low cost, conformal growth (good step coverage), selective growth and inexpensive deposition system make the method of LPD versatile in IC fabrication. LPD-SiOF is a potential method to replace traditi...
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17623097606060992270 |