Study of Self-Aligned SiGe Elevated S/D poly-Si Thin-Film Transistor
碩士 === 國立中山大學 === 物理學系研究所 === 90 === Abstract In this thesis, we have fabricated a novel poly-Si thin film transistor with self-aligned SiGe raised source/drain (SiGe-RSD TFT). The SiGe-RSD regions were grown selectively by ultra-high vacuum chemical vapor deposition (UHVCVD) at 550℃. The resultant...
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32402593226964476600 |