Characterization of Sputterd ZrN Thin Film
碩士 === 國立中山大學 === 材料科學研究所 === 90 === Abstract In this study, ZrN films were deposited on silicon wafer、copper and aluminum sheets by reactive sputtering of Zr target at room temperature in a mixed N2-Ar atmosphere with N2 gas flow rates of 5 and 6 sccm. Films of ZrN about 1μm thick were annealed at...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88016112336408465417 |
| Summary: | 碩士 === 國立中山大學 === 材料科學研究所 === 90 ===
Abstract
In this study, ZrN films were deposited on silicon wafer、copper and aluminum sheets by reactive sputtering of Zr target at room temperature in a mixed N2-Ar atmosphere with N2 gas flow rates of 5 and 6 sccm. Films of ZrN about 1μm thick were annealed at various temperatures in order to study the grain growth and the inter-diffusion of atoms.
Electron probe X-ray microanalyzer（EPMA） showed that the
as-deposited ZrN films were stoichiometric. The ring patterns of electron diffraction in transmission electron microscope (TEM) indicated that only ZrN was present without any Zr metal.
The grain size of ZrN showed no apparent change after annealing at 900℃ and 1000℃, but showed that（200） orientation is preferred to （111）orientation. No Zr-Si compound were found at the ZrN/Si interface after annealing.
It was revealed that the ZrN grain size in the ZrN/Si interface was about 5～15 nm, then broadened to columnar structure of 20～50nm in diameter away from the interface.
The grain size of ZrN on Cu substrate was 3～15 nm at the ZrN/Cu interface and leave away from the interface was 10～80 nm. No Cu-Zr compound was found at the interface after annealing at 650℃ for 1 hour.
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