Design of strained Ⅲ-Ⅴ epitaxial structures and the MBE growth
碩士 === 國立中山大學 === 光電工程研究所 === 90 === The work of this thesis includes molecular beam epitaxy (MBE) and optical study of strained InGaAs and InGaAlAs multiple quamtum well (MQW) structures. Two strained layer structures suitable for devices applications have been designed, grown, and investigated....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52479478636349844092 |