Growth of Lattice-matched Ternary and Quaternary Compound Semiconductors on InP by Molecular Beam Epitaxy
碩士 === 國立中山大學 === 光電工程研究所 === 90 === This work is to control the fluxes of the Ga, In and Al sources in our MBE system to grow lattice-matched InGaAs, InAlAs and InGaAlAs epi-layers on InP substrates. With the As overpressure condition in the MBE system, we can control the temperature of Ga K-cell...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04214906437683547036 |