| Summary: | 碩士 === 國立中央大學 === 化學工程與材料工程研究所 === 90 ===
ABSTRACT
In this paper, we characterize DES-1010 E-Beam resist for high-resolution electron beam lithography from low to high dose energy. Results indicate the DSE-1010 is very high sensitive for high throughput E-Beam lithography applications. In general, at optimum condition, the trench-width can be easily down to 80 nm. When the dose increased, the character of DES-1010 had been changed from positive to negative, the change of chemical structure was observed by FTIR. It could get 500 nm trench also. Many factors influence performance of resists such as soft bake, post exposure bake, and exposure dose, which are discussed and optimize.
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