Optical Properties of Isoelectronic Indium Doped AlGaN Films

碩士 === 國立交通大學 === 電子物理系 === 90 === We have studied optical properties of various isoelectronic In-doped AlGaN films grown by metalorganic chemical vapor phase epitaxy. From 20 K photoluminescence (PL) spectra, as In-doping was increased, the narrowing of full width at half maximum of the...

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Bibliographic Details
Main Authors: Kuo-Chuan Liao, 廖國筌
Other Authors: Ming-Chih Lee
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/85567782298688967180

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