Optical Properties of Isoelectronic Indium Doped AlGaN Films
碩士 === 國立交通大學 === 電子物理系 === 90 === We have studied optical properties of various isoelectronic In-doped AlGaN films grown by metalorganic chemical vapor phase epitaxy. From 20 K photoluminescence (PL) spectra, as In-doping was increased, the narrowing of full width at half maximum of the...
Main Authors: | Kuo-Chuan Liao, 廖國筌 |
---|---|
Other Authors: | Ming-Chih Lee |
Format: | Others |
Language: | zh-TW |
Published: |
2002
|
Online Access: | http://ndltd.ncl.edu.tw/handle/85567782298688967180 |
Similar Items
-
The Optical Properties of Isoelectronic Indium doped P-type GaN films
by: Wei-Hao Lee, et al.
Published: (2001) -
Isoelectronic Indium Doping Effects On P-type GaN Films
by: Miao-Chih Hsu, et al.
Published: (2002) -
Optical Properties of Isoelectronic Arsenic Implanted and Doped GaN Films
by: Jia-Qing Xiao, et al.
Published: (2001) -
Time-Resolved Photoluminescence Study of Isoelectronic In and As Doped GaN Films
by: Wei-Cherng Lin, et al.
Published: (2000) -
The Optical Properties of Isoelectronic Phosphorus Implanted GaN films
by: Chih-hung Chuang, et al.
Published: (2000)