Optical Properties of Isoelectronic Indium Doped AlGaN Films
碩士 === 國立交通大學 === 電子物理系 === 90 === We have studied optical properties of various isoelectronic In-doped AlGaN films grown by metalorganic chemical vapor phase epitaxy. From 20 K photoluminescence (PL) spectra, as In-doping was increased, the narrowing of full width at half maximum of the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85567782298688967180 |