The Investigation of Gate Oxide Interface and Process-Induced Device Reliability in Deep-Submicron and Nanometer CMOS Devices
博士 === 國立交通大學 === 電子工程系 === 90 === The charge pumping (CP) technique has been widely used for the characterization of hot carrier (HC) reliability and the evaluation of semiconductor interface. The objective of this dissertation is to employ this CP technique for investigating the hot car...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14725014500598252592 |