Hot Carrier and NBTI Reliability Evaluation of Dual-Gate CMOS Devices Using an Improved Gated-Diode Measurement Technique
碩士 === 國立交通大學 === 電子工程系 === 90 === Recently, the gated-diode (GD) drain current measurement has been widely used to characterize hot-carrier degradation in MOSFET’s. The generation/recombination current in the drain-to-well diode as a function of the gate voltage, combined with two-dimens...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35530602018502270218 |