A Study on (Ta2O5)1-X-(TiO2)X Dielectric Film and the Application on Microwave Passive Device
碩士 === 國立交通大學 === 材料科學與工程系 === 90 === Amorphous (Ta2O5)1-X-(TiO2)X films were fabricated by rf magnetron co-sputtering and annealed through a rapid thermal processing(RTP). The film thickness was controlled within 300A. The film was sandwiched between IrO2 and Al as the bottom and top ele...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82717011157745430559 |