the study of high breakdown voltage InGaP channel MESFETs

• Main Authors: S. H. Chen, 陳世宏
• Other Authors: Edward Y. Chang
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/61834530450369485307

碩士 === 國立交通大學 === 材料科學與工程系 === 90 === Abstract A high breakdown voltage InGaP channel metal-semiconductor field-effect transistor ( MESFET ) has been developed in this study. The device is designed for the high output power amplifier application for wireless communication. The DC characteristics of the InGaP MESFETs and the GaAs MESFETs were measured. For the InGaP MESFETs, the device exhibited a saturation current density of 108 mA/mm with a gate to drain breakdown voltage of 55 volts. The maximum transconductance gm of the device was 36 mS/mm, and the pinch-off voltage was —5 volts. On the other hand, the GaAs MESFETs exhibited a saturation current density of 200 mA/mm with a gate-drain voltage of 39 volts. The maximum transconductance gm of the device was 98 mS/mm, and the pinch-off voltage was —1.6 volts. The fabrications of InGaP MESFETs and GaAs MESFETs were successful. The high band-gap InGaP channel metal-semiconductor field-effect transistor has a high breakdown voltage and it could be used for the high power amplifier application. The InGaP channel MESFETs developed has a good potential for the application in the power amplifier for wireless communication.