the study of high breakdown voltage InGaP channel MESFETs
碩士 === 國立交通大學 === 材料科學與工程系 === 90 === Abstract A high breakdown voltage InGaP channel metal-semiconductor field-effect transistor ( MESFET ) has been developed in this study. The device is designed for the high output power amplifier application for wireless communication....
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61834530450369485307 |