Fabrication of Nanoscale Oxide PatternsOn Silicon Wafer Using Scanning Probe Microscope

• Main Authors: Ming-Tsong Kao, 高銘聰
• Other Authors: Ren-Hui Lin
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/96761662025527055425

碩士 === 國立成功大學 === 機械工程學系碩博士班 === 90 === The behavior and profile of oxide grown by the Atomic Force Microscope (AFM) probe on silicon wafer is researched in view of electrochemical reaction in this study. There are not many theoretic models describing how the parameters affect height and width of grown silicon oxide. Two parts are involved in our theoretic analysis: one is the profile of water bridge determined by balance of mechanics; and the other is the FWHM of grown dioxide analyzed by calculating the OH ion distribution on the silicon wafer before and after reaction by the governing equation. Before proceeding experiments, the time how long the reaction and the growing rate of silicon oxide get steady is tested in order to check if the steady state analysis is suitable. According to the result of the experimental tests and Dataga’s theory, the growing rate goes almost steady after 0.5 seconds. Therefore the oxidation time is the fixed parameter, and the changing parameters are the induced voltage, V, probe’s radius of curvature, R, and the shortest distance between probe and wafer, D. According to the experimental results and the theoretical analysis, the three parameters affect the grown profile of silicon dioxide as following: the larger induced voltage, the wider oxide; the bigger probe’s radius of curvature, the wider oxide; the smaller distance between probe and wafer, the narrower oxide. The experimental results show the same trends as the theoretical analysis.