Study of Ultrathin Gate Dielectric and High K Gate Dielectric for CMOS Technology
博士 === 國立成功大學 === 電機工程學系碩博士班 === 90 === In this thesis two dielectric materials, silicon dioxide SiO2 and tantalum pentoxide Ta2O5, were investigated. In the development of the integrated circuit, the MOS device plays a very important role. The silicon dioxide SiO2 is used to act as its insulator la...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/xe679m |