GaN/AlGaN Metal-Oxide-Heterostructure FET with a Liquid Phase Deposited Oxide Gate
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 90 === The LPD have advantages of low cost and low temperature. And, the oxidation system is simply to operator. In this thesis, we successfully used liquid phase deposited (LPD) to grow silicon oxide layer on GaN/AlGaN device at low temperature (40℃). From that, w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97985883974786128931 |