The Transient Effect of Current Gain in InGaP/GaAs HBTs
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 90 === With the development of the wireless communication, microwave devices play a very important role; the heterojunction bipolar transistors are the devices currently of the power amplifiers in RF-IC circuit. By the selectivity of the heterostructure material, I...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26053818418328304065 |