The Design of 5.7GHz Power and Low Noise Amplifierand the Research of MMIC Electromagnetic Analysis
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 90 === In this thesis we design key devices of 5.7GHz ISM band. We use the GaAs transistor to fabricate high frequency devices and support suitable characters in our operation frequency. The devices that we research are the most important devices in RF frond end,...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34516103094736796281 |