Preparation of W-N thin film and its characteristics as gate electrode
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 90 === In this dissertation, the material characteristics of reactive r.f. sputtering WNX thin films and the possibility of employing WNX thin films as the metal gate of the MOS structure are investigated. The WNX thin films are sputtered with various sputtering p...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/jxq232 |