Growth of Nanocrystalline Diamond Films by Hot Filament Chemical Vapor Deposition Using CCl4/H2 Gases

碩士 === 國立成功大學 === 化學工程學系碩博士班 === 90 === Abstract The growth characteristics of the nanodiamond films deposited using CCl4/H2 in a hot-filament chemical vapor deposition reactor were investigated in this study. Film growth was studied under the following conditions: filament temperature, concentra...

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Main Authors: Chen-Hao Ku, 古鎮豪
Other Authors: Jih-Jen Wu
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/3cd3yn
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spelling ndltd-TW-090NCKU50630952018-06-25T06:05:29Z http://ndltd.ncl.edu.tw/handle/3cd3yn Growth of Nanocrystalline Diamond Films by Hot Filament Chemical Vapor Deposition Using CCl4/H2 Gases 以CCl4/H2於熱燈絲化學氣相沉積系統中成長奈米鑽石薄膜之研究 Chen-Hao Ku 古鎮豪 碩士 國立成功大學 化學工程學系碩博士班 90 Abstract The growth characteristics of the nanodiamond films deposited using CCl4/H2 in a hot-filament chemical vapor deposition reactor were investigated in this study. Film growth was studied under the following conditions: filament temperature, concentration of CCl4 ([CCl4]), substrate temperature (Ts), distance between substrate and filament (d) in ranges 1900℃-2000℃, 1.5%-3.5%, 530℃-730℃ and 4 mm- 7 mm, respectively. Film thickness and surface morphology studies were conducted by scanning electron microscopy. The surface roughness of the diamond film was measured using atomic force microscopy. Raman spectroscopy and glancing incident angle X-ray diffraction were employed to evaluate the bonding and crystalline structures of the films, respectively. The microstructure of the diamond films was studied using transmission electron microscopy. The thickness of the film deposited for 1 hr first increased and decreased afterwards, then increased again when [CCl4] and Ts were increased and d was decreased, respectively. Bonding and structural analyses reveal that diamond films were synthesized in the first thickness increasing region (growth region I) and only amorphous carbon films or graphitic carbon films were obtained in the second thickness increasing region (growth region IV). Nanodiamond films were grown in the near maximum thickness region (growth region II) as well as in the thickness decreasing region (growth region III). As the growth times were elongated further, however, the grain sizes of the diamond films deposited in the growth region II were increased with film thickness. Thick nanodiamond films with uniform grain size over entire film were only successfully grown beyond a critical point in the growth region III. AFM analyses show that the nanodiamond films grown for 1 hr at substrate temperatures of 610℃-730℃ and a distance between substrate and filament of 5 mm possess typical rms surface roughness of 10-15 nm. An optimal rms surface roughness of 6 nm has been achieved. Furthermore, XRD and TEM analyses show that the average grain size in ranges 10-30 nm under these conditions. Jih-Jen Wu 吳季珍 2002 學位論文 ; thesis 119 zh-TW
collection NDLTD
language zh-TW
format Others
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description 碩士 === 國立成功大學 === 化學工程學系碩博士班 === 90 === Abstract The growth characteristics of the nanodiamond films deposited using CCl4/H2 in a hot-filament chemical vapor deposition reactor were investigated in this study. Film growth was studied under the following conditions: filament temperature, concentration of CCl4 ([CCl4]), substrate temperature (Ts), distance between substrate and filament (d) in ranges 1900℃-2000℃, 1.5%-3.5%, 530℃-730℃ and 4 mm- 7 mm, respectively. Film thickness and surface morphology studies were conducted by scanning electron microscopy. The surface roughness of the diamond film was measured using atomic force microscopy. Raman spectroscopy and glancing incident angle X-ray diffraction were employed to evaluate the bonding and crystalline structures of the films, respectively. The microstructure of the diamond films was studied using transmission electron microscopy. The thickness of the film deposited for 1 hr first increased and decreased afterwards, then increased again when [CCl4] and Ts were increased and d was decreased, respectively. Bonding and structural analyses reveal that diamond films were synthesized in the first thickness increasing region (growth region I) and only amorphous carbon films or graphitic carbon films were obtained in the second thickness increasing region (growth region IV). Nanodiamond films were grown in the near maximum thickness region (growth region II) as well as in the thickness decreasing region (growth region III). As the growth times were elongated further, however, the grain sizes of the diamond films deposited in the growth region II were increased with film thickness. Thick nanodiamond films with uniform grain size over entire film were only successfully grown beyond a critical point in the growth region III. AFM analyses show that the nanodiamond films grown for 1 hr at substrate temperatures of 610℃-730℃ and a distance between substrate and filament of 5 mm possess typical rms surface roughness of 10-15 nm. An optimal rms surface roughness of 6 nm has been achieved. Furthermore, XRD and TEM analyses show that the average grain size in ranges 10-30 nm under these conditions.
author2 Jih-Jen Wu
author_facet Jih-Jen Wu
Chen-Hao Ku
古鎮豪
author Chen-Hao Ku
古鎮豪
spellingShingle Chen-Hao Ku
古鎮豪
Growth of Nanocrystalline Diamond Films by Hot Filament Chemical Vapor Deposition Using CCl4/H2 Gases
author_sort Chen-Hao Ku
title Growth of Nanocrystalline Diamond Films by Hot Filament Chemical Vapor Deposition Using CCl4/H2 Gases
title_short Growth of Nanocrystalline Diamond Films by Hot Filament Chemical Vapor Deposition Using CCl4/H2 Gases
title_full Growth of Nanocrystalline Diamond Films by Hot Filament Chemical Vapor Deposition Using CCl4/H2 Gases
title_fullStr Growth of Nanocrystalline Diamond Films by Hot Filament Chemical Vapor Deposition Using CCl4/H2 Gases
title_full_unstemmed Growth of Nanocrystalline Diamond Films by Hot Filament Chemical Vapor Deposition Using CCl4/H2 Gases
title_sort growth of nanocrystalline diamond films by hot filament chemical vapor deposition using ccl4/h2 gases
publishDate 2002
url http://ndltd.ncl.edu.tw/handle/3cd3yn
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