The Variation of Bulk Microdefect for Heavy Boron Doped Czochralski Silicon Crystal after Simulated Process Thermal Cycles
碩士 === 國立中興大學 === 精密工程研究所 === 90 === The P- epitaxy on heavy boron doped wafer has been well employed in power MOS device for reducing vertical on-resistance and also provide effective latch-up hardening for advanced CMOS technology. However, the micro-defect generated from the substrate...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84814589894490447802 |