The Study of Hydrogenated Amorphous Silicon Nitride and Amorphous Thin Film Transistors
碩士 === 國立中興大學 === 電機工程學系 === 90 === The major application of hydrogenated amorphous silicon nitride (a-SiNx:H) film is gate dielectric material and passivation layer for thin film transistors (TFTs). A good quality a-SiNx:H film has those characteristics including low leakage current, low...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57423898568815935255 |