Study of Lateral Power MOSFETs on SOI
碩士 === 華梵大學 === 機電工程研究所 === 90 === In the high speed、high frequency times, this paper will study in development of power devices which have lower leakage current and parasitic capacitance effect by using Silicon-On-Insulator (SOI) technology, lower power consumption and fast switching rate is obtain...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95137612367402628390 |