The Fabrication and Study of GaAs MOSFET Using Rare-Earth Oxide as Gate Dielectrics

• Main Authors: Jiun-Jia Chen, 陳俊嘉
• Other Authors: Hui-Ling Kao
• Format: Others
• Language: zh-TW
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/71413065567710080071

碩士 === 中原大學 === 電子工程研究所 === 90 === The main goal of this thesis is to fabricate GaAs Metal Oxide Semiconductor Field Effect Transistors using rear-earth oxide as gate dielectrics and study the device characteristics. GaAs and related compound material system dominates the applications of modern high frequency communication devices because of their low noise, high electron mobility and the nature of semi-insulating substrates. However, the critical issue of GaAs MOSFET is lack of reliable gate oxide layer. Recently, Dr. M. Hong, etal in Lucent Bell Laboratories have developed the growth of Ga2O3(Gd2O3) on GaAs substrates. We collaborated with Bell Laboratories to fabricate the n-channel depletion mode GaAs MOSFETs. First, we use SRIM and MEDICI to simulate the ion implantation and the characteristics of devices. And study the wet etching for Ga2O3(Gd2O3) dielectrics. O+ implantation and wet etching isolation were used to fabricate the devices. The I-V characteristic of n-channel depletion mode GaAs MOSFETs are consistent to the theorem trend of MOSFETs.